Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

نویسندگان

  • M. Miura-Mattausch
  • M. Chan
  • J. He
  • H. Koike
  • H. J. Mattausch
  • T. Nakagawa
  • Y. J. Park
  • T. Tsutsumi
  • Z. Yu
چکیده

We aim at constructing a common platform for compact model development based on the Verilog-A language for collaboration among different research groups. The project aims in particular at a framework for efficient development of multi-gate MOSFET models for circuit simulation. We have developed several prototypes of multi-gate MOSFET models based on different concepts till now. Phenomena expected to become important for the multi-gate MOSFET generation are modeled on the basis of their physical origins. These phenomena are implemented into each of the specific multi-gate MOSFET models by plugging in modules from the common platform. Parasitic resistive and capacitive contributions are also modularized to represent the complete circuit performance of the multi-gate MOSFET device for efficient circuit development.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

متن کامل

High-Speed Penternary Inverter Gate Using GNRFET

This paper introduces a new design of penternary inverter gate based on graphene nanoribbon field effect transistor (GNRFET). The penternary logic is one of Multiple-valued logic (MVL) circuits which are the best substitute for binary logic because of its low power-delay product (PDP) resulting from reduced complexity of interconnects and chip area. GNRFET is preferred over Si-MOSFET for circui...

متن کامل

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...

متن کامل

Design and Construction of a Sensorless Circuit for Brushless DC Motor using Third Harmonic back Electromotive Force

In this paper the method of sensorless startup of direct current brushless motor using third harmonic back Electromotive Force (EMF) and motor startup using microcontroller for pulse width modulation, power switch control and motor output analysis is presented which renders RPM control and high speed achievement for motor. The microcontroller is used for processor and MOSFETs are used for power...

متن کامل

The Advanced Compact MOSFET Model and its Application to Inversion Coefficient Based Circuit Design

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008